Carlos Eduardo Viana, Ana N. R. da Silva, Nilton I. Morimoto
LSI - EPUSP - São Paulo, S.P., Brazil Tel: +55 11 818 5666 - Fax: +55 11 818 5665
E-mail: ceviana@lsi.usp.br, neilde@lsi.usp.br, morimoto@lsi.usp.br
and
Olivier Bonnaud
GMV - UPRESA 6076 - University de Rennes I - Rennes, France Tel: +33 (0) 2 99 28 60 71 Fax: +33 (0) 2 99 28 16 74 -
E-mail: bonnaud@univ-rennes1.fr
Abstract
This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate but can create in parallel some defects. From several physical analyses, we show that the presence of argon modifies the plasma composition, the surface roughness of silicon wafer, and the surface reaction. The optimum argon flow ranges between 65 and 80 sccm.
Observation. Accept for publication in March of 2001.