Carlos E. Viana, Ana Neilde R. da Silva and Nilton I. Morimoto
LSI-PEE-EPUSP, Av. Professor Luciano Gualberto ,travessa 3, 158. Cep.: 05508-900, São Paulo, SP - Brazil. Fax.: +55 011 818-5665.
ceviana@lsi.usp.br - 2eilde@lsi.usp.br - morimoto@lsi.usp.br
Abstract
This work presents a study of the argon flow influence in the PETEOS silicon oxide thin films deposition process. We observed, by optical emission spectroscopy, an improvement in the TEOS/oxygen reaction rate adding argon in the gas mixture. FTIRS analysis showed that carbon contamination decreases with argon flow; and no OH contamination was observed in the films. The AFM analysis showed small particles at the SiO2/silicon interface which can be attributed to the remained unreacted [(Et-O)3Si-OH] radicals on the silicon wafer surface. The particles density decreases when the argon flow increases.