Development of a Low Temperature High Quality Silicon Oxide Deposition Process

Carlos Eduardo Viana and Nilton Itiro Morimoto

LSI-PEE-EPUSP, Av. Professor Luciano Gualberto travessa 3, 158. Cep.: 05508-900, São Paulo, SP - Brazil. Fax.: +55 011 818-5665.

ceviana@lsi.usp.br - morimoto@lsi.usp.br

Abstract

This work reports the results obtained in the development of a low temperature high quality silicon oxide deposition process. As main results, the silicon oxide films have high uniformity, in thickness (= 94%) as well as in refractive index (= 97%). The HF?CV curves showed a high concentration of effective charges (QSS = 1.42 x 1012 cm-2) due to the high levels of metallic concentration from the reaction chamber (Fe " 4.574 x 10-12 cm-2, Zn " 1.997 x 10-12 cm-2 and Cu " 2.409 x 10-12 cm-2) measured by TRXFA. However, the IV curves showed a low leakage current (IF = 2.35 x 10-11 A) and electric breakdown fields around 9.43 MV/cm, also the IV curves characteristics indicated a better composition of the deposited silicon oxide films.