Carlos Eduardo Viana, Ana Neilde R. da Silva and Nilton Itiro Morimoto
LSI-PEE-EPUSP, Av. Professor Luciano Gualberto travessa 3, 158. Cep.: 05508-900, São Paulo, SP - Brazil. Fax.: +55 011 818-5665.
ceviana@lsi.usp.br - neilde@lsi.usp.br - morimoto@lsi.usp.br
ABSTRACT
In this work, we present the first results on the argon influence in the PETEOS silicon oxide deposition process. It was observed that adding a argon flow in the gas mixture can improve the quality and the uniformity of deposited silicon oxide thin films.