Title: “Electric Characterization of Thin SIO₂-PETEOS Films”.

Author: MSc. Carlos Eduardo Viana.

Adviser: Dr. Nilton Itiro Morimoto.

Local: São Paulo, LSI-EPUSP.

Date: 17 February, 1998.

“Abstract”

This work reports the results of the electric characterization of silicon oxide thin films deposited by PECVD using the TEOS as organic silicon source.

The silicon oxide films were deposited on (100) silicon wafers, P type, diameter of 75 mm and resistivity of 7 to 13 W.cm. Elipsometry and FTIRS analysis techniques were used to characterize the deposited films. CV-AF, CV-BF and IV curves were extracted from MOS capacitors manufactured with the PECVD deposited silicon oxide. TRXFA analysis technique was used to measure the concentration of metallic contaminants, in the silicon oxide thin film, from the deposition system.

The main results are: a) the silicon oxide films had presented high uniformity, in thickness (≥ 95%) as well as in refractive index (≥ 98%) and high reproducibility; b) the FTIRS analysis of the silicon oxide films showed low level of H incorporation and a better structural quality of the deposited films compared with previous works; c) the CV‑AF curves showed a high concentration of effective charges (Q_SS ≥ 1.42 x 10¹² cm^-2), probably due to the high levels of metallic contamination from the reaction chamber (Fe » 4.574 x 10 ¹² cm^-2, Zn » 1.997 x 10 ¹² cm^-2 and Cu » 2.409 x 10 ¹² cm^-2) measured by TRXFA; d) the IV curves showed a low leakage current (I_F ≤ 2.35 x 10^‑11 A) and electric breakdown fields around 9.43 MV/cm, also the IV curves characteristics indicated a better composition of the deposited silicon oxide films.