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A. Nakada, K. Kanemoto, M. M. Oka, Y.
Tamai, and T. Ohmi, "Influence of fluorine in BF2+ implantation on the
formation of ultrashallow and low-leakage silicon p+n junctions by 450-500
annealing", to be published on J. Appl. Phys. 81 (1997).
H. Aharoni, T. Ohmi, T. Shibata, M. M.
Oka, A. Nakada, and Y. Tamai, "Analysis of n+p silicon junctions with varying
substrate doping concentrations made under ultra clean processing technology",
to be published on the J. Appl. Phys. on January 1997.
H. Aharoni, T. Ohmi, T. Shibata, M. M.
Oka, A. Nakada, and Y. Tamai, "A comparative examination of ion implanted
n+p junctions annealed at 1000 and 450", Jpn. J. Appl. Phys. 35 (1996)
4606.
A. Nakada, M. M. Oka, Y. Tamai, T. Shibata,
and T. Ohmi, "Influence of substrate-boron concentration on the residual
end-of-range defects in 450 annealed As+-implanted junctions", J. Appl.
Phys. 80 (1996) 1594.
M. M. Oka, A. Nakada, K. Tomita, T. Shibata,
T. Ohmi, and T. Nitta, "Reducing the reverse-bias current in 450-annealed
n+p junction by hydrogen radical sintering", Jpn. J. Appl. Phys. 34 (1995)
796.
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| International Conferences |
M. M. Oka; A. Nakada; Y. Tamai;
T. Shibata; and T. Ohmi; " The defects induced in deep regions by ion implantation
of BF2+ and effects of the annealing temperatureion as determined from
the JxV characteristics of pn junction characteristics of pn junctions";
International Conference on Microelectronics and Conference on Microelectronics
and Packaging - ICMP '98, XIII SBMicro, 10 a 14 de agosto de 1998, Curitiba,
P.R., Brazil; Proceedings - I - of the International Conference on Microelectronics
and Packaging - ICMP '98, p. 380 - 387.
M. M. Oka, A. Nakada, K. Tomita,
T. Shibata, T. Ohmi, and T. Nitta, "Reducing the reverse-bias current in
450-annealed n+p junction by hydrogen radical sintering", Proc. of the
SSDM '94, The 1994 International Conference on Solid State Devices and
Materials, Yokohama, Japan, 1994, (1994) 742. Y. Tamai, M. M. Oka, A. Nakada,
T. Shibata, and T. Ohmi, "Residual end-of-range damage reduction in low-temperature-annealed
ion-implanted junction by using low-doped silicon substrate", to be presented
at the 191th Meeting of the Electrochem Soc., Montreal, Quebec, Canada,
May 4-9, 1997.
M. M. Oka, T. Ohmi, A. Nakada,
Y. Tamai, K. Kanemoto, and T. Shibata, "Depth profile of point defects
in ion implanted n+p and p+n junctions formed by 450 post-implantation
annealing and impact of defects on junction characteristics", Abstracts
of MRS, 1996 Fall Meeting of MRS, Boston, Dec. 2 - 6, 1996, (1996) 180.
A. Nakada, K. Kanemoto, M. M.
Oka, Y. Tamai, and T. Ohmi, "Formation of ultra-shallow and low-leakage
p+n junctions by low-temperature post-implantation annealing", Proc. of
the SSDM '96, The 1996 International Conference on Solid State Devices
and Materials, Yokohama, Japan, 1996, (1996) 413.
A. Nakada, M. M. Oka, Y. Tamai,
T. Shibata, H. Aharoi, and T. Ohmi, "Effect of substrate boron concentration
on the integrity of 450-annealed ion-implanted junctions ", Proc. of the
SSDM '95, The 1995 International Conference on Solid State Devices and
Materials, Osaka, Japan, 1995, (1995) 366.
A. Nakada, M. M. Oka, K. Tomita,
T. Shibata, T. Ohmi, and T. Nitta, "Lifetime enhancement in low temperature-annealed
ion-implanted junctions by hydrogen radical sintering", Ext. Abstracts
of ECS, 186th ECS Meeting, Florida, Oct. 1994, (1994) 651.
M. M. Oka, A. Nakada, K. Tomita,
T. Shibata, T. Ohmi, and T. Nitta, "Reducing the reverse-bias current in
450 oC -annealed n+p junction by hydrogen radical sintering", Proc. of
the SSDM '94, The 1994 International Conference on Solid State Devices
and Materials, Yokohama, Japan, Aug. 23 - 26, 1994, (1994) 742.
M. M. Oka, A. Nakada, K. Tomita,
T. Shibata, T. Ohmi, and T. Nitta; "Low reverse-bias current n+p-junction
formation by 450oC furnace annealing"; 2nd International Workshop on Process
and Devices of Scaled LSI's; July 26, 1994; Technical Report of IEICE,
7 (1994) 35.
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M. M Oka; A. Nakada; Y. Tamai; T. Shibata;
and T. Ohmi; "Formation of Very Low Leakage Current pn Junction by Low
Temperature Annealing Assisted by Xe-lamp Irradiation"; XII Congresso da
Sociedade Brasileira de Microeletrônica, 30 de julho a 1 de agosto
de 1997, Caxambu, M.G., Brasil; Anais do XII Congresso da Sociedade Brasileira
de Microeletrônica, Artigo 86 (CD-ROM).
M. M. Oka e R. Furlan; "Difusão
de As a partir do TiSi2 com estruturas C49 e C54", VII Congresso da Sociedade
Brasileira de Microeletrônica, 6 a 10 de julho de 1992, São
Paulo, S.P., Brasil; Anais do VII Congresso da Sociedade Brasileira de
Microeletrônica, p. 655-657
M. M. Oka e J. W. Swart;
"Estudo do crescimento lateral do siliceto de Co formado por RTR (Recozimento
Térmico Rápido)"; VI Congresso da Sociedade Brasileira de
Microeletrônica, 15 a 19 de julho de 1991, Belo Horizonte, M.G.,
Brasil; Anais do VI Congresso da Sociedade Brasileira de Microeletrônica,
p. 383 - 392.
M. M. Oka e J. W. Swart; "Experimental
Study of lateral growth of titanium silicide"; V Congresso da Sociedade
Brasileira de Microeletrônica, 11 a 13 de julho de 1990, Campinas,
S.P., Brasil; Anais do V Congresso da Sociedade Brasileira de Microeletrônica,
p. 357 - 358.
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"Estudo do crescimento lateral de silicetos
e formação do siliceto de cobalto sobre silício altamente
dopado -- Study on the lateral growth of silicides and cobalt silicide
formation over hgihly doped silicon"
Advisor : Prof. Dr. Jacobus W. Swart
Polytechnique School of the University
of São Paulo, Brazil, 1991
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“Research on formation of ultra
shallow junction by ultra clean ion implantation”
Advisor : Prof. Tadahiro Ohmi
University ofTohoku, Sendai, Japan, 1997
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